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The semiconductor laser drive circuit is difficult to adjust the laser light pulse at the low nanosecond level.In order to solve it, a driving scheme of semiconductor laser using GaN high-speed semiconductor device is studied.It can realize high-precision adjustment of laser light pulse width and high repetition frequency.Firstly,build a pre-sequence generation circuit based on Xilinx Zynq platform to output sequential signals with the characteristics of FPGA gate circuit field editability and low power consumption,etc;secondly,designing energy storage and Controlling the energy storage loop by driving a Gallium Nitride Field Effect Transistor (GaN FET) as a switch;at last,realizating the precise modulation of laser pulse at low nanosecond level.Validated experimentally and analyzed,the driver circuit can stably output laser pulse signals with adjustable pulse width of 3~200ns, adjustable repetition frequency of 0~1MHz, peak power of over 70W and rise time of less than 5ns.