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By analyzing the importance of PN junction temperature of MOS transistors to the reliability of devices, it is pointed out that the old method of power aging is inadequate; the maximum allowable junction temperature can’t be reached in the test process. A test method is proposed, the junction temperature is deduced by measuring the on-resistance of the MOS transistor in real time during the testing process, so that the junction temperature of the tested device can be controlled as close as possible to the maximum allowable junction temperature during the aging process. The structure and working mode of the automatic aging test system are introduced. The working principle of the aging board and the method of calibrating the aging parameters are expounded in detail. The function of the test system is verified by testing IRFB4019. The test results show that the junction temperature of the tested device can be controlled during the aging process, the junction temperature can be controlled near the maximum allowable temperature, it can eliminate devices with potential problems more effectively, compared with the old methods, the new method can aging more fully.