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硅通孔鍵合硅片預對準邊緣信息采集與處理
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廈門(mén)理工學(xué)院福建省光電技術(shù)與器件重點(diǎn)實(shí)驗室,廈門(mén)理工學(xué)院福建省光電技術(shù)與器件重點(diǎn)實(shí)驗室

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國家自然科學(xué)基金(61701422)


Edge Imformation Collecting and Processing of TSV Wafer Pre-alignment
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Fujian Key Laboratory of Optoelectronic Technology and Devices,Xiamen University of Technology,Xiamen,361024,China

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    摘要:

    研究硅通孔即TSV(through-silicon vias)鍵合硅片的預對準邊緣信息采集與處理方法。TSV硅片與標準硅片相比,有減薄、鍵合不同心、邊緣毛刺多、存在崩邊;缺口被填充、內有鼓膠、鍍銅等工藝特點(diǎn),使得傳統基于線(xiàn)陣CCD一維圖像采集與處理預對準方法失敗。針對TSV硅片的特點(diǎn),把線(xiàn)陣CCD配合掃描運動(dòng)采集的一維原始圖像集拼接獲得二維圖像,應用二維圖像處理技術(shù)提取邊緣信息,硅片整周邊緣數據用最小二乘圓擬合算法識別出圓心位置,缺口邊緣數據用Hough直線(xiàn)變換識別出缺口兩條斜邊,其交點(diǎn)定位為缺口位置,從而實(shí)現TSV硅片的自動(dòng)預對準。實(shí)際測量表明,該方法預對準重復性定位精度<20um、預對準時(shí)間<40s,滿(mǎn)足指標需求,為光刻機能夠曝光TSV硅片提供有力支持。

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    This study was focused on edge imformation collecting and processing of TSV wafer pre-alignment. Compared to standard wafers TSV wafers have features of being thinned or deflected when bonding, with burrs and flaws around the wafer edge, notch with remnant glues and copper in it being covered, which results in failure in traditional pre-alignment based on 1-dimensional image collecting and processing sampled by line CCD. Aiming to TSV wafers, the 1-demensional images sampled by line CCD were put together to form a 2-demensional image, working in with scanning motion. The wafer edge information was collected via 2-demensional image processing technology, the center position was recognized via least square round fitting method, two notch hypotenuses whose jointing point was regarded as notch position were recognized via Hough line transform, thus an automatic TSV wafer pre-aligning method was achieved. The method has been proved its precision and efficiency are up to the standard by practical test, with the repeatability less than 20u m and consuming time less than 40s, providing strong support for lithography exposing TSV wafers.

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黃春霞,伊錦旺.硅通孔鍵合硅片預對準邊緣信息采集與處理計算機測量與控制[J].,2018,26(9):205-209.

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歷史
  • 收稿日期:2018-02-01
  • 最后修改日期:2018-03-03
  • 錄用日期:2018-03-05
  • 在線(xiàn)發(fā)布日期: 2018-09-14
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